Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 40 @100mA, 1V
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4036
|
Magnatec | 类似代替 | TO-39 |
MULTICOMP 2N4036 双极晶体管
|
||
2N4036
|
Central Semiconductor | 类似代替 | TO-39-3 |
MULTICOMP 2N4036 双极晶体管
|
||
2N4036
|
SPC | 类似代替 | TO-39 |
MULTICOMP 2N4036 双极晶体管
|
||
2N4036
|
Raytheon | 类似代替 |
MULTICOMP 2N4036 双极晶体管
|
|||
2N4036
|
Fairchild | 类似代替 | TO-39 |
MULTICOMP 2N4036 双极晶体管
|
||
2N4236
|
CDIL | 类似代替 |
MULTICOMP 2N4236 单晶体管 双极, PNP, -80 V, 3 MHz, 1 W, -1 A, 40 hFE
|
|||
|
|
TT Electronics | 类似代替 |
MULTICOMP 2N4236 单晶体管 双极, PNP, -80 V, 3 MHz, 1 W, -1 A, 40 hFE
|
|||
2N4236
|
TT Electronics/Optek Technology | 类似代替 |
MULTICOMP 2N4236 单晶体管 双极, PNP, -80 V, 3 MHz, 1 W, -1 A, 40 hFE
|
|||
2N4236
|
NJS | 类似代替 |
MULTICOMP 2N4236 单晶体管 双极, PNP, -80 V, 3 MHz, 1 W, -1 A, 40 hFE
|
|||
2N4236
|
TT Electronics/Welwyn | 类似代替 | TO-205 |
MULTICOMP 2N4236 单晶体管 双极, PNP, -80 V, 3 MHz, 1 W, -1 A, 40 hFE
|
||
2N4236
|
ETC | 类似代替 |
MULTICOMP 2N4236 单晶体管 双极, PNP, -80 V, 3 MHz, 1 W, -1 A, 40 hFE
|
|||
2N4236
|
Boca Semiconductor | 类似代替 | TO-39 |
MULTICOMP 2N4236 单晶体管 双极, PNP, -80 V, 3 MHz, 1 W, -1 A, 40 hFE
|
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