Technical parameters/polarity: PNP
Technical parameters/dissipated power: 7000 mW
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 200
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/packaging: TO-39-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Box
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4036
|
Magnatec | 功能相似 | TO-39 |
MULTICOMP 2N4036 双极晶体管
|
||
2N4036
|
Central Semiconductor | 功能相似 | TO-39-3 |
MULTICOMP 2N4036 双极晶体管
|
||
2N4036
|
SPC | 功能相似 | TO-39 |
MULTICOMP 2N4036 双极晶体管
|
||
2N4036
|
Raytheon | 功能相似 |
MULTICOMP 2N4036 双极晶体管
|
|||
2N4036
|
Fairchild | 功能相似 | TO-39 |
MULTICOMP 2N4036 双极晶体管
|
||
2N4036LEADFREE
|
Central Semiconductor | 功能相似 | TO-39 |
TO-39 PNP 65V 1A
|
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