Technical parameters/breakdown voltage: 40 V
Technical parameters/Input capacitance (Ciss): 3pF @10V(Vds)
Technical parameters/rated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4117A-E3
|
Vishay Siliconix | 完全替代 | TO-206 |
MOSFET N-CH 40V 30uA TO-206AF
|
||
|
|
Vishay Intertechnology | 完全替代 | TO-206 |
MOSFET N-CH 40V 30uA TO-206AF
|
||
2N4117A-E3
|
VISHAY | 完全替代 | TO-206 |
MOSFET N-CH 40V 30uA TO-206AF
|
||
PN4119
|
Fairchild | 功能相似 | TO-226-3 |
JFET N-CH 40V 0.35W TO92
|
||
TP4118
|
Allegro MicroSystems | 功能相似 |
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review