Technical parameters/breakdown voltage: -70.0 V|40 V
Technical parameters/dissipated power: 300 mW
Technical parameters/Input capacitance (Ciss): 3pF @10V(Vds)
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-206
External dimensions/packaging: TO-206
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Other/Manufacturing Applications: Signal processing, testing and measurement, safety
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Ledil | 类似代替 |
MOSFET N-CH 40V 30uA TO-206AF
|
|||
|
|
InterFET | 类似代替 |
MOSFET N-CH 40V 30uA TO-206AF
|
|||
|
|
Calogic | 类似代替 | TO-72 |
MOSFET N-CH 40V 30uA TO-206AF
|
||
|
|
Linear Integrated System | 类似代替 | TO-72 |
MOSFET N-CH 40V 30uA TO-206AF
|
||
2N4117A
|
Micross | 类似代替 | TO-72 |
MOSFET N-CH 40V 30uA TO-206AF
|
||
2N4117A
|
Pulse Electronics | 类似代替 |
MOSFET N-CH 40V 30uA TO-206AF
|
|||
|
|
Calogic | 完全替代 | TO-72 |
MOSFET N-CH 40V 80uA TO-206AF
|
||
|
|
Linear Integrated System | 完全替代 | TO-72 |
MOSFET N-CH 40V 80uA TO-206AF
|
||
2N4118A
|
Vishay Siliconix | 完全替代 | TO-206 |
MOSFET N-CH 40V 80uA TO-206AF
|
||
2N4118A
|
InterFET | 完全替代 | TO-72-3 |
MOSFET N-CH 40V 80uA TO-206AF
|
||
2N4118A-E3
|
Vishay Siliconix | 完全替代 | TO-206 |
MOSFET N-CH 40V 80uA TO-206AF
|
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