Technical parameters/rated current: 10.0 mA
Technical parameters/drain source resistance: 150 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage of gate source: -25.0 V
Technical parameters/Continuous drain current (Ids): 15.0 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-206
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-206
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
National Semiconductor | 完全替代 |
JFET N-CH 30V 0.3W TO-206AF
|
|||
2N4416
|
Vishay Siliconix | 完全替代 | TO-206 |
JFET N-CH 30V 0.3W TO-206AF
|
||
|
|
Semelab | 完全替代 |
JFET N-CH 30V 0.3W TO-206AF
|
|||
|
|
Motorola | 完全替代 | TO-72 |
JFET N-CH 30V 0.3W TO-206AF
|
||
|
|
Rochester | 完全替代 |
JFET N-CH 30V 0.3W TO-206AF
|
|||
2N4416
|
Central Semiconductor | 完全替代 | TO-72 |
JFET N-CH 30V 0.3W TO-206AF
|
||
2N4416
|
VISHAY | 完全替代 | TO-72-3 |
JFET N-CH 30V 0.3W TO-206AF
|
||
2N4416
|
Calogic | 完全替代 | TO-72 |
JFET N-CH 30V 0.3W TO-206AF
|
||
2N4416
|
Vishay Semiconductor | 完全替代 | TO-206 |
JFET N-CH 30V 0.3W TO-206AF
|
||
|
2N4416
|
Intersil | 完全替代 |
JFET N-CH 30V 0.3W TO-206AF
|
|||
|
2N4416LEADFREE
|
Central Semiconductor | 功能相似 | TO-72 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-72, TO-72, 3 PIN
|
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