Technical parameters/rated current: | 10.0 mA |
|
Technical parameters/drain source resistance: | 150 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/breakdown voltage of gate source: | -25.0 V |
|
Technical parameters/Continuous drain current (Ids): | 15.0 mA |
|
Technical parameters/breakdown voltage: | 30 V |
|
Technical parameters/Input capacitance (Ciss): | 4pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-206 |
|
Dimensions/Packaging: | TO-206 |
|
Physical parameters/operating temperature: | -50℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
National Semiconductor | 完全替代 |
JFET N-CH 30V 0.3W TO-206AF
|
|||
2N4416
|
Vishay Siliconix | 完全替代 | TO-206 |
JFET N-CH 30V 0.3W TO-206AF
|
||
|
|
Semelab | 完全替代 |
JFET N-CH 30V 0.3W TO-206AF
|
|||
|
|
Motorola | 完全替代 | TO-72 |
JFET N-CH 30V 0.3W TO-206AF
|
||
|
|
Rochester | 完全替代 |
JFET N-CH 30V 0.3W TO-206AF
|
|||
2N4416
|
Central Semiconductor | 完全替代 | TO-72 |
JFET N-CH 30V 0.3W TO-206AF
|
||
2N4416
|
VISHAY | 完全替代 | TO-72-3 |
JFET N-CH 30V 0.3W TO-206AF
|
||
2N4416
|
Calogic | 完全替代 | TO-72 |
JFET N-CH 30V 0.3W TO-206AF
|
||
2N4416
|
Vishay Semiconductor | 完全替代 | TO-206 |
JFET N-CH 30V 0.3W TO-206AF
|
||
2N4416
|
Intersil | 完全替代 |
JFET N-CH 30V 0.3W TO-206AF
|
|||
2N4416LEADFREE
|
Central Semiconductor | 功能相似 | TO-72 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-72, TO-72, 3 PIN
|
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