Technical parameters/frequency: 200 MHz
Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 600 mW
Technical parameters/gain bandwidth product: 200 MHz
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 600 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 600 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 4.7 mm
External dimensions/width: 3.68 mm
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT), Tape & Box (TB)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4403G
|
ON Semiconductor | 功能相似 | TO-92-3 |
ON SEMICONDUCTOR 2N4403G 单晶体管 双极, PNP, 40 V, 200 MHz, 625 mW, 600 mA, 200 hFE
|
||
2N4403TA
|
Fairchild | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TA 单晶体管 双极, PNP, -40 V, 200 MHz, 625 mW, -600 mA, 20 hFE
|
||
2N4403TA
|
ON Semiconductor | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TA 单晶体管 双极, PNP, -40 V, 200 MHz, 625 mW, -600 mA, 20 hFE
|
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