Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4403TA
|
Fairchild | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TA 单晶体管 双极, PNP, -40 V, 200 MHz, 625 mW, -600 mA, 20 hFE
|
||
2N4403TA
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TA 单晶体管 双极, PNP, -40 V, 200 MHz, 625 mW, -600 mA, 20 hFE
|
||
2N4403TF
|
Fairchild | 类似代替 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Transistor General Purpose
|
||
2N4403TF
|
ON Semiconductor | 类似代替 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Transistor General Purpose
|
||
2N4403TFR
|
Fairchild | 完全替代 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TFR 单晶体管 双极, PNP, 40 V, 250 MHz, 625 mW, 20 hFE
|
||
2N4403TFR
|
ON Semiconductor | 完全替代 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TFR 单晶体管 双极, PNP, 40 V, 250 MHz, 625 mW, 20 hFE
|
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