Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 600 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 250 MHz
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 4.7 mm
External dimensions/width: 3.93 mm
External dimensions/height: 4.7 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4401BU
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N4401BU 单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE
|
||
2N4401BU
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4401BU 单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE
|
||
2N4401TF
|
Fairchild | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N4401TF 单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 20 hFE
|
||
2N4401TFR
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4401TFR 晶体管, NPN, 40V, TO-92
|
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