Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1.5A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-46
External dimensions/packaging: TO-46
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3763
|
CDIL | 功能相似 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
|||
2N3763
|
Semicoa Semiconductor | 功能相似 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
|||
2N3763
|
Central Semiconductor | 功能相似 | TO-39-3 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
||
JANTX2N3763
|
Microsemi | 功能相似 | TO-39 |
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,
|
||
JANTX2N3763
|
Raytheon | 功能相似 |
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, Metal, 3 Pin,
|
|||
JANTXV2N3763L
|
Microsemi | 类似代替 | TO-5 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
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