Technical parameters/minimum current amplification factor (hFE): 20
Technical parameters/Maximum current amplification factor (hFE): 80
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 100 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/packaging: TO-39-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3763
|
CDIL | 功能相似 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
|||
2N3763
|
Semicoa Semiconductor | 功能相似 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
|||
2N3763
|
Central Semiconductor | 功能相似 | TO-39-3 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
||
JANTX2N3763
|
Microsemi | 功能相似 | TO-39 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
||
JANTX2N3763
|
Raytheon | 功能相似 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
|||
JANTXV2N3763L
|
Microsemi | 功能相似 | TO-5 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
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