Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 50 @10mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3903
|
Central Semiconductor | 功能相似 | TO-226-3 |
NPN Si-Epitaxial PlanarTransistors
|
||
|
|
Diotec Semiconductor | 功能相似 |
NPN Si-Epitaxial PlanarTransistors
|
|||
|
|
Rochester | 功能相似 | CASE 29-11 |
NPN Si-Epitaxial PlanarTransistors
|
||
|
|
Micro Electronics | 功能相似 |
NPN Si-Epitaxial PlanarTransistors
|
|||
2N3903
|
Continental Device | 功能相似 | TO-92 |
NPN Si-Epitaxial PlanarTransistors
|
||
2N3903
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN Si-Epitaxial PlanarTransistors
|
||
2N3903
|
Samsung | 功能相似 |
NPN Si-Epitaxial PlanarTransistors
|
|||
2N3903
|
Fairchild | 功能相似 | TO-226-3 |
NPN Si-Epitaxial PlanarTransistors
|
||
2N3903RLRM
|
Rochester | 功能相似 |
通用晶体管NPN硅 General Purpose Transistors NPN Silicon
|
|||
MPSA06-AP
|
Micro Commercial Components | 功能相似 | TO-226-3 |
MICRO COMMERCIAL COMPONENTS MPSA06-AP 双极性晶体管, NPN, 80V, TO-92
|
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