Technical parameters/dissipated power: 300 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage: 30 V
Technical parameters/Input capacitance (Ciss): 6pF @15V(Vds)
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-72
External dimensions/packaging: TO-72
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF245A
|
NXP | 功能相似 | TO-92 |
N-沟道硅音响场效晶体管 N-channel silicon field-effect transistors
|
||
BF245A
|
NXP | 功能相似 | TO-92 |
N-沟道硅音响场效晶体管 N-channel silicon field-effect transistors
|
||
BF256A
|
TI | 功能相似 |
JFET - 通用 JFET - General Purpose
|
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