Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 25.0 mA
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/Continuous drain current (Ids): 6.50 mA
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF245A
|
NXP | 功能相似 | TO-92 |
JFET VHF / UHF放大器N沟道 - 耗尽 JFET VHF/UHF Amplifiers N-Channel - Depletion
|
||
BF245A
|
NXP | 功能相似 | TO-92 |
JFET VHF / UHF放大器N沟道 - 耗尽 JFET VHF/UHF Amplifiers N-Channel - Depletion
|
||
BF245B
|
Philips | 功能相似 |
N通道放大器 N-Channel Amplifiers
|
|||
BF245B
|
New Jersey Semiconductor | 功能相似 |
N通道放大器 N-Channel Amplifiers
|
|||
BF245B
|
NXP | 功能相似 | SOT-54 |
N通道放大器 N-Channel Amplifiers
|
||
BF245C
|
Philips | 类似代替 | SPT |
JFET晶体管 BULK FET-RFSS
|
||
BF245C
|
ON Semiconductor | 类似代替 | TO-226-3 |
JFET晶体管 BULK FET-RFSS
|
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