Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N1613
|
Central Semiconductor | 完全替代 | TO-39-3 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
2N1613
|
Motorola | 完全替代 | TO-39 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
2N1613
|
ST Microelectronics | 完全替代 | TO-5-3 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
2N1613
|
Harris | 完全替代 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
|||
2N1613
|
Microsemi | 完全替代 | TO-39 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
JANTX2N1613
|
Microsemi | 类似代替 | TO-205 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
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