Technical parameters/rated voltage (DC): 75.0 V
Technical parameters/rated current: 500 mA
Technical parameters/dissipated power: 800 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 10V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-5-3
External dimensions/length: 9.4 mm
External dimensions/width: 9.4 mm
External dimensions/height: 6.6 mm
External dimensions/packaging: TO-5-3
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N1613
|
Central Semiconductor | 功能相似 | TO-39-3 |
TRANS NPN 50V 0.5A TO-39
|
||
2N1613
|
Motorola | 功能相似 | TO-39 |
TRANS NPN 50V 0.5A TO-39
|
||
2N1613
|
ST Microelectronics | 功能相似 | TO-5-3 |
TRANS NPN 50V 0.5A TO-39
|
||
2N1613
|
Harris | 功能相似 |
TRANS NPN 50V 0.5A TO-39
|
|||
2N1613
|
Microsemi | 功能相似 | TO-39 |
TRANS NPN 50V 0.5A TO-39
|
||
JANTX2N1613
|
Microsemi | 功能相似 | TO-205 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
JANTXV2N1613
|
Microsemi | 功能相似 | TO-39 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
JANTXV2N3500
|
Microsemi | 功能相似 | TO-39 |
NPN Bipolar junction transistor 150V
|
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