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Model SI4156DY-T1-GE3
Description VISHAY SI4156DY-T1-GE3 Transistor, MOSFET, N-channel, 24 A, 30 V, 0.0048 ohm, 10 V, 2.2 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
2.16  yuan 2.16yuan
5+:
$ 2.9093
25+:
$ 2.6938
50+:
$ 2.5429
100+:
$ 2.4783
500+:
$ 2.4352
2500+:
$ 2.3813
5000+:
$ 2.3597
10000+:
$ 2.3274
Quantity
5+
25+
50+
100+
500+
Price
$2.9093
$2.6938
$2.5429
$2.4783
$2.4352
Price $ 2.9093 $ 2.6938 $ 2.5429 $ 2.4783 $ 2.4352
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4839) Minimum order quantity(5)
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Technical parameters/number of pins: 8

Technical parameters/drain source resistance: 0.0048 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/threshold voltage: 2.2 V

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 24.0 A

Technical parameters/rise time: 20 ns

Technical parameters/descent time: 15 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/06/15

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