Technical parameters/drain source resistance: 42 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 330 W
Technical parameters/product series: IRFS4229
Technical parameters/threshold voltage: 5 V
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/Continuous drain current (Ids): 45.0 A
Technical parameters/Input capacitance (Ciss): 4560pF @25V(Vds)
Technical parameters/rated power (Max): 330 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -40℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
LiteOn | 功能相似 | TO-263-3 |
N 通道 MOSFET，200V 至 250V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
IRF644SPBF
|
Vishay Semiconductor | 功能相似 | SMD-263 |
N 通道 MOSFET，200V 至 250V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
IRF644SPBF
|
Vishay Intertechnology | 功能相似 | D2PAK |
N 通道 MOSFET，200V 至 250V，Vishay Semiconductor ### MOSFET 晶体管，Vishay Semiconductor
|
||
IRFS4229TRLPBF
|
International Rectifier | 类似代替 | TO-252-3 |
晶体管, MOSFET, PDP 开关, N沟道, 45 A, 250 V, 0.042 ohm, 10 V, 5 V
|
||
IRFS4229TRLPBF
|
IFA | 类似代替 |
晶体管, MOSFET, PDP 开关, N沟道, 45 A, 250 V, 0.042 ohm, 10 V, 5 V
|
|||
SUM45N25-58-E3
|
Vishay Siliconix | 功能相似 | TO-263-3 |
N沟道250 -V （ D- S） 175℃ MOSFET N-Channel 250-V (D-S) 175 °C MOSFET
|
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