Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -13.0 A
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0073 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/input capacitance: 3.94 nF
Technical parameters/gate charge: 71.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 20.0 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): 13.0 A
Technical parameters/rise time: 10 ns
Technical parameters/Input capacitance (Ciss): 3939pF @15V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 65 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TPS1100D
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
||
TPS1100DR
|
TI | 功能相似 | SOIC-8 |
单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
|
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