Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -1.30 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 180 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 500 mW
Technical parameters/input capacitance: 150 pF
Technical parameters/gate charge: 1.40 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/breakdown voltage of gate source: ±25.0 V
Technical parameters/Continuous drain current (Ids): -1.30 A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 150pF @15V(Vds)
Technical parameters/rated power (Max): 460 mW
Technical parameters/descent time: 1 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.4 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML9303TRPBF
|
Infineon | 功能相似 | SOT-23-3 |
INTERNATIONAL RECTIFIER IRLML9303TRPBF 场效应管, MOSFET, P沟道, -30V, -2.3 A, SOT-23
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||
NDS352P
|
Fairchild | 功能相似 | SOT-23-3 |
P沟道逻辑电平增强模式场效应晶体管 P-Channel Logic Level Enhancement Mode Field Effect Transistor
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NDS356P
|
Fairchild | 功能相似 | SOT-23-3 |
P沟道逻辑电平增强模式场效应晶体管 P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
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