Technical parameters/rated voltage (DC): | -20.0 V |
|
Technical parameters/rated current: | -1.10 A |
|
Technical parameters/polarity: | P-CH |
|
Technical parameters/dissipated power: | 500mW (Ta) |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Continuous drain current (Ids): | 1.1A |
|
Technical parameters/Input capacitance (Ciss): | 180pF @10V(Vds) |
|
Technical parameters/rated power (Max): | 460 mW |
|
Technical parameters/dissipated power (Max): | 500mW (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | SuperSOT |
FAIRCHILD SEMICONDUCTOR FDN352AP 晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
|
||
FDN352AP
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN352AP 晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
|
||
FDN352AP
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN352AP 晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review