Technical parameters/rated current: 220 mA
Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 2.6 Ω
Technical parameters/polarity: N-Channel, P-Channel, Dual N-Channel, Dual P-Channel
Technical parameters/dissipated power: 300 mW
Technical parameters/threshold voltage: 850 mV
Technical parameters/input capacitance: 114 pF
Technical parameters/gate charge: 1.40 nC
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/leakage source breakdown voltage: ±25.0 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 220 mA
Technical parameters/rise time: 8.00 ns
Technical parameters/Input capacitance (Ciss): 9.5pF @10V(Vds)
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 0.3 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 1 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDG6320C
|
ON Semiconductor | 类似代替 | SC-70-6 |
ON Semiconductor 双 Si N/P沟道 MOSFET FDG6320C, 140 mA，220 mA, Vds=25 V, 6引脚 SOT-363 (SC-70)封装
|
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