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Model FDG6320C
Description ON Semiconductor 双 Si N/P沟道 MOSFET FDG6320C, 140 mA，220 mA, Vds=25 V, 6引脚 SOT-363 (SC-70)封装
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Brand: ON Semiconductor
Packaging SC-70-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.39  yuan 0.39yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1182) Minimum order quantity(1)
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Technical parameters/number of pins:

6

 

Technical parameters/drain source resistance:

4 Ω

 

Technical parameters/dissipated power:

300 mW

 

Technical parameters/threshold voltage:

850 mV

 

Technical parameters/drain source voltage (Vds):

25 V

 

Technical parameters/Input capacitance (Ciss):

9.5pF @10V(Vds)

 

Technical parameters/rated power (Max):

300 mW

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

300 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

SC-70-6

 

Dimensions/Length:

2 mm

 

Dimensions/Width:

1.25 mm

 

Dimensions/Height:

1 mm

 

Dimensions/Packaging:

SC-70-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDG6322C FDG6322C ON Semiconductor 类似代替 SC-70-6
ON Semiconductor 双 Si N/P沟道 MOSFET FDG6322C, 220 mA，410 mA, Vds=25 V, 6引脚 SOT-363 (SC-70)封装
PDF
FDG6322C FDG6322C Fairchild 类似代替 SC-70-6
ON Semiconductor 双 Si N/P沟道 MOSFET FDG6322C, 220 mA，410 mA, Vds=25 V, 6引脚 SOT-363 (SC-70)封装
PDF

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