Technical parameters/halogen-free state: Halogen Free
Technical parameters/dissipated power: 175 W
Technical parameters/threshold voltage: 3 V
Technical parameters/leakage source breakdown voltage: 65 V
Technical parameters/output power: 45 W
Technical parameters/gain: 18.8 dB
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: NI-360S-3
External dimensions/length: 9.78 mm
External dimensions/width: 5.97 mm
External dimensions/height: 3.94 mm
External dimensions/packaging: NI-360S-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF9045NR1
|
NXP | 功能相似 | TO-270-2 |
Trans RF MOSFET N-CH 65V 3Pin TO-270 T/R
|
||
MRFE6S9045NR1
|
Freescale | 功能相似 | TO-270-2 |
晶体管, 射频FET, 66 VDC, 865 MHz, 960 MHz, TO-270
|
||
MRFE6S9060NR1
|
NXP | 功能相似 | TO-270-2 |
NXP MRFE6S9060NR1 射频场效应管, MOSFET, N沟道, 66V, TO-270
|
||
MRFE6S9060NR1
|
NXP | 功能相似 | TO-270-2 |
NXP MRFE6S9060NR1 射频场效应管, MOSFET, N沟道, 66V, TO-270
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review