Technical parameters/frequency: 945 MHz
Technical parameters/rated current: 10 µA
Technical parameters/halogen-free state: Halogen Free
Technical parameters/dissipated power: 177000 mW
Technical parameters/drain source voltage (Vds): 65 V
Technical parameters/output power: 45 W
Technical parameters/gain: 19 dB
Technical parameters/test current: 350 mA
Technical parameters/Input capacitance (Ciss): 70pF @28V(Vds)
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 177000 mW
Technical parameters/rated voltage: 65 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-270-2
External dimensions/packaging: TO-270-2
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF9060NR1
|
NXP | 类似代替 | TO-270-2 |
Trans RF MOSFET N-CH 65V 3Pin TO-270 T/R
|
||
MRFE6S9045NR1
|
Freescale | 功能相似 | TO-270-2 |
晶体管, 射频FET, 66 VDC, 865 MHz, 960 MHz, TO-270
|
||
MRFE6S9060NR1
|
NXP | 功能相似 | TO-270-2 |
NXP MRFE6S9060NR1 射频场效应管, MOSFET, N沟道, 66V, TO-270
|
||
MRFE6S9060NR1
|
NXP | 功能相似 | TO-270-2 |
NXP MRFE6S9060NR1 射频场效应管, MOSFET, N沟道, 66V, TO-270
|
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