Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1 W
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/Maximum current amplification factor (hFE): 160
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC63916_D27Z
|
ON Semiconductor | 类似代替 | TO-92 |
FAIRCHILD SEMICONDUCTOR BC63916_D27Z 单晶体管 双极, NPN, 80 V, 100 MHz, 830 mW, 1 A, 25 hFE
|
||
BC63916_D27Z
|
Fairchild | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR BC63916_D27Z 单晶体管 双极, NPN, 80 V, 100 MHz, 830 mW, 1 A, 25 hFE
|
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