Technical parameters/frequency: 100 MHz
Technical parameters/dissipated power: 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Continental Device | 完全替代 | TO-92 |
高电流晶体管 High Current Transistors
|
||
BC639
|
Fairchild | 完全替代 | TO-92-3 |
高电流晶体管 High Current Transistors
|
||
BC639
|
Nexperia | 完全替代 | TO-92 |
高电流晶体管 High Current Transistors
|
||
BC639
|
CDIL | 完全替代 |
高电流晶体管 High Current Transistors
|
|||
BC63916_D26Z
|
Fairchild | 类似代替 | TO-92-3 |
Trans GP BJT NPN 80V 1A 3Pin TO-92 T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review