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Model FDMS3672
Description UltraFET® MOSFET，Fairchild Semiconductor UItraFET® Trench MOSFET Combining the characteristics of achieving benchmark efficiency in power conversion applications. This device can withstand high energy in avalanche mode, and the diode exhibits very short reverse recovery time and accumulated charge. Optimized for high frequency efficiency, minimum RDS (on), low ESR, low total gate charge, and Miller gate charge. Applications: High frequency DC-DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management. ###MOSFET transistor, Fairchild Semiconductor offers a wide range of MOSFET device combinations, including high voltage (>250V) and low voltage (Fairchild MOSFET provides excellent design reliability by reducing voltage peaks and overshoot to reduce junction capacitance and reverse recovery charge, without the need for additional external components to maintain system startup and operation for longer periods of time.
Product QR code
Brand: Fairchild
Packaging Power-56-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.28  yuan 7.28yuan
10+:
$ 8.7360
100+:
$ 8.2992
500+:
$ 8.0080
1000+:
$ 7.9934
2000+:
$ 7.9352
5000+:
$ 7.8624
7500+:
$ 7.8042
10000+:
$ 7.7750
Quantity
10+
100+
500+
1000+
2000+
Price
$8.7360
$8.2992
$8.0080
$7.9934
$7.9352
Price $ 8.7360 $ 8.2992 $ 8.0080 $ 7.9934 $ 7.9352
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7316) Minimum order quantity(10)
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Technical parameters/rated voltage (DC): 100 V

Technical parameters/rated current: 22.0 A

Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 19 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/input capacitance: 2.68 nF

Technical parameters/gate charge: 44.0 nC

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 22.0 A

Technical parameters/rise time: 11 ns

Technical parameters/Input capacitance (Ciss): 2680pF @50V(Vds)

Technical parameters/rated power (Max): 2.5 W

Technical parameters/descent time: 8 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 78 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: Power-56-8

External dimensions/length: 5 mm

External dimensions/width: 6 mm

External dimensions/height: 0.75 mm

External dimensions/packaging: Power-56-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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100V N沟道PowerTrench MOSFET的 100V N-Channel PowerTrench MOSFET
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