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Model BSM25GB120DN2
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
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Brand: Siemens Semiconductor
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1819) Minimum order quantity(1)
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Technical parameters/dissipated power: 200 W

Technical parameters/operating temperature (Max): 150 ℃

Other/Product Lifecycle: Obsolete

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSM25GB120DN2 BSM25GB120DN2 Infineon 功能相似 Half Bridge1
IGBT功率模块（半桥包括快速续流二极管封装用绝缘金属基板） IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
PDF
BSM25GB120DN2 BSM25GB120DN2 Siemens Semiconductor 功能相似
IGBT功率模块（半桥包括快速续流二极管封装用绝缘金属基板） IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
PDF

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