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Model BSM25GB120DN2
Description IGBTPower module (half bridge including fast freewheeling diode packaging with insulated metal substrate) IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Product QR code
Brand: Infineon
Packaging Half Bridge1
Delivery time
Packaging method
Standard packaging quantity 1
214.9  yuan 214.9yuan
1+:
$ 247.1293
10+:
$ 240.6824
50+:
$ 235.7398
100+:
$ 234.0207
200+:
$ 232.7313
500+:
$ 231.0121
1000+:
$ 229.9377
2000+:
$ 228.8632
Quantity
1+
10+
50+
100+
200+
Price
$247.1293
$240.6824
$235.7398
$234.0207
$232.7313
Price $ 247.1293 $ 240.6824 $ 235.7398 $ 234.0207 $ 232.7313
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6030) Minimum order quantity(1)
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Technical parameters/dissipated power: 200 W

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Screw

Encapsulation parameters/Encapsulation: Half Bridge1

External dimensions/width: 34 mm

External dimensions/packaging: Half Bridge1

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSM25GB120DN2 BSM25GB120DN2 Infineon 功能相似 Half Bridge1
IGBT功率模块（半桥包括快速续流二极管封装用绝缘金属基板） IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
PDF
BSM25GB120DN2 BSM25GB120DN2 Siemens Semiconductor 功能相似
IGBT功率模块（半桥包括快速续流二极管封装用绝缘金属基板） IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
PDF

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