Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 900 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 3.50 A
Technical parameters/Input capacitance (Ciss): 387pF @10V(Vds)
Technical parameters/rated power (Max): 900 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/length: 3 mm
External dimensions/width: 1.5 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTGD4167CT1G
|
ON Semiconductor | 类似代替 | TSOT-23-6 |
ON SEMICONDUCTOR NTGD4167CT1G Dual MOSFET, N and P Channel, 2.6 A, 30 V, 52 mohm, 4.5 V, 900 mV 新
|
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