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Model NTGD4167CT1G

Description ON SEMICONDUCTOR NTGD4167CT1G Dual MOSFET, N and P Channel, 2.6 A, 30 V, 52 mohm, 4.5 V, 900 mV new

Brand: ON Semiconductor

Packaging TSOT-23-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels:	2
Technical parameters/number of pins:	6
Technical parameters/drain source resistance:	0.052 Ω
Technical parameters/polarity:	N-Channel, P-Channel
Technical parameters/dissipated power:	900 mW
Technical parameters/threshold voltage:	900 mV
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	2.60 A
Technical parameters/Input capacitance (Ciss):	295pF @15V(Vds)
Technical parameters/rated power (Max):	900 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	1.1 W
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	TSOT-23-6
Dimensions/Length:	3.1 mm
Dimensions/Width:	1.7 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	TSOT-23-6
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

Alternative material

	Model	Brand	Similarity	Encapsulation	Introduction	Data manual
	NTGD3149CT1G	ON Semiconductor	类似代替	TSOT-23-6	功率MOSFET的互补性， 20 V ， + 3.5 / -2.7 A， TSOP - 6双 Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual	PDF