Technical parameters/power supply current: 21 mA
Technical parameters/number of circuits: 1
Technical parameters/conversion rate: 2.40 kV/μs
Technical parameters/input compensation voltage: 8 mV
Technical parameters/input bias current: 25 µA
Technical parameters/3dB bandwidth: 850 MHz
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HFA1112IBZ
|
Intersil | 完全替代 | SOIC-8 |
INTERSIL HFA1112IBZ 可编程/可变增益放大器, 1 放大器, 1个放大器, 850 MHz, -40 °C, 85 °C, ± 4.5V 至 ± 5.5V
|
||
HFA1112IBZ
|
Renesas Electronics | 完全替代 | SOIC-8 |
INTERSIL HFA1112IBZ 可编程/可变增益放大器, 1 放大器, 1个放大器, 850 MHz, -40 °C, 85 °C, ± 4.5V 至 ± 5.5V
|
||
HFA1112IBZ96
|
Renesas Electronics | 完全替代 | SOIC-8 |
为850MHz ,低失真可编程增益缓冲放大器 850MHz, Low Distortion Programmable Gain Buffer Amplifiers
|
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