Technical parameters/power supply voltage (DC): 12.0 V
Technical parameters/power supply current: 21 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/bandwidth: 850 MHz
Technical parameters/conversion rate: 2.40 kV/μs
Technical parameters/Over temperature protection: No
Technical parameters/input compensation voltage: 8 mV
Technical parameters/input bias current: 25 µA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/3dB bandwidth: 850 MHz
Technical parameters/gain bandwidth: 850 MHz
Technical parameters/power supply voltage (Max): 11 V
Technical parameters/power supply voltage (Min): 9 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HFA1112IBZ96
|
Renesas Electronics | 完全替代 | SOIC-8 |
为850MHz ，低失真可编程增益缓冲放大器 850MHz, Low Distortion Programmable Gain Buffer Amplifiers
|
||
|
|
Harris | 完全替代 | DIP |
850MHz,低变形可编程增益缓冲放大器
|
||
HFA1112IP
|
Intersil | 完全替代 | DIP-8 |
850MHz,低变形可编程增益缓冲放大器
|
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