Technical parameters/rated voltage (DC): 6.80 V
Technical parameters/tolerances: ±5 %
Technical parameters/rated power: 400 mW
Technical parameters/forward voltage: 1.5V @200mA
Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 6.8 V
Technical parameters/forward voltage (Max): 1.5V @200mA
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-204AH
External dimensions/packaging: DO-204AH
Physical parameters/operating temperature: -65℃ ~ 200℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Vishay Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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1N5235B
|
Central Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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|
1N5235B
|
Diodes | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
先科ST | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5235B
|
Multicomp | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
1N5235B
|
New Jersey Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR 1N5235B 单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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