Technical parameters/forward voltage: 1 V
Technical parameters/Maximum reverse voltage (Vrrm): 800V
Technical parameters/forward current: 3 A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/packaging: DO-201AD
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FR306G
|
EIC | 功能相似 | DO-201AD |
DO-201AD 800V 3A 500ns
|
||
FR306G
|
Galaxy Semi-Conductor | 功能相似 |
DO-201AD 800V 3A 500ns
|
|||
|
|
Rectron Semiconductor | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
||
|
|
Leshan Radio | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
||
|
|
Rectron | 功能相似 |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
|||
HER307G
|
Multicomp | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
||
HER307G
|
DIYI Electronic | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
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