Technical parameters/reverse recovery time: 500 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/packaging: DO-201AD
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FR306G
|
EIC | 功能相似 | DO-201AD |
Rectifier Diode, 1 Element, 3A, 800V V(RRM),
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FR306G
|
Galaxy Semi-Conductor | 功能相似 |
Rectifier Diode, 1 Element, 3A, 800V V(RRM),
|
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|
Rectron Semiconductor | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
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|
Leshan Radio | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
||
|
|
Rectron | 功能相似 |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
|||
HER307G
|
Multicomp | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
||
HER307G
|
DIYI Electronic | 功能相似 | DO-201AD |
TAIWAN SEMICONDUCTOR HER307G 快速/超快功率二极管, 单, 800 V, 3 A, 1.7 V, 75 ns, 125 A
|
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