Technical parameters/tolerances: ±2 %
Technical parameters/forward voltage: 1.1V @200mA
Technical parameters/dissipated power: 500 mW
Technical parameters/rated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Physical parameters/operating temperature: 175 ℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Ammo Pack
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5226BTR
|
ON Semiconductor | 功能相似 | DO-35 |
ON Semiconductor 1N5226BTR 单路 齐纳二极管, 3.3V 5% 500 mW, 2引脚 DO-35封装
|
||
1N5226BTR
|
Fairchild | 功能相似 | DO-35-2 |
ON Semiconductor 1N5226BTR 单路 齐纳二极管, 3.3V 5% 500 mW, 2引脚 DO-35封装
|
||
1N5226BTR
|
Central Semiconductor | 功能相似 | DO-35 |
ON Semiconductor 1N5226BTR 单路 齐纳二极管, 3.3V 5% 500 mW, 2引脚 DO-35封装
|
||
|
|
New Jersey Semiconductor | 功能相似 | 2 |
1N5236 系列 500 mW 7.5 V 20 mA 通孔 齐纳二极管 - DO-35
|
||
|
|
CHENG-YI | 功能相似 |
1N5236 系列 500 mW 7.5 V 20 mA 通孔 齐纳二极管 - DO-35
|
|||
1N5236B
|
ST Microelectronics | 功能相似 | DO-35 |
1N5236 系列 500 mW 7.5 V 20 mA 通孔 齐纳二极管 - DO-35
|
||
|
|
Panjit | 功能相似 | DO-35 |
1N5236 系列 500 mW 7.5 V 20 mA 通孔 齐纳二极管 - DO-35
|
||
|
1N5236B
|
DC Components | 功能相似 |
1N5236 系列 500 mW 7.5 V 20 mA 通孔 齐纳二极管 - DO-35
|
|||
MMSZ4684T1G
|
ON Semiconductor | 功能相似 | SOD-123-2 |
ON SEMICONDUCTOR MMSZ4684T1G 单管二极管 齐纳, 3.3 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
|
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