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Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0055 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 217 W
Technical parameters/threshold voltage: 2.6 V
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/Continuous drain current (Ids): 100A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 3980pF @40V(Vds)
Technical parameters/rated power (Max): 217 W
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 217W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Supply in progress
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management, Motor Drive and Control, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD19503KCS
|
TI | 类似代替 | TO-220-3 |
80V、N 通道 NexFET(TM) 功率 MOSFET，CSD19503KCS
|
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