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Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.0076 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 188 W
Technical parameters/threshold voltage: 2.8 V
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/leakage source breakdown voltage: 80 V
Technical parameters/Continuous drain current (Ids): 100A
Technical parameters/rise time: 3 ns
Technical parameters/Input capacitance (Ciss): 2730pF @40V(Vds)
Technical parameters/rated power (Max): 188 W
Technical parameters/descent time: 2 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 188W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.51 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Supply in progress
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD19501KCS
|
TI | 类似代替 | TO-220-3 |
80V、N 通道 NexFET(TM) 功率 MOSFET，CSD19501KCS
|
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