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Model 1N3070
Description DIODE GEN PURP 200V 500mA DO35
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Brand: ON Semiconductor
Packaging DO-204AH
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8735) Minimum order quantity(1)
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Technical parameters/forward voltage: 1V @100mA

Technical parameters/reverse recovery time: 50 ns

Technical parameters/forward current (Max): 0.5 A

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/operating temperature: 175℃ (Max)

Technical parameters/dissipated power (Max): 500 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 2

Encapsulation parameters/Encapsulation: DO-204AH

External dimensions/packaging: DO-204AH

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: lead-free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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1N3070TR 1N3070TR ON Semiconductor 功能相似 DO-35
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