Technical parameters/rated voltage (DC): | 200 V |
|
Technical parameters/rated current: | 500 mA |
|
Technical parameters/capacitance: | 5.00 pF |
|
Technical parameters/output current: | ≤500 mA |
|
Technical parameters/forward voltage: | 1V @100mA |
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Technical parameters/polarity: | Standard |
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Technical parameters/reverse recovery time: | 50 ns |
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Technical parameters/forward voltage (Max): | 1V @100mA |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/operating temperature: | 175℃ (Max) |
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Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Width: | 1.91 mm |
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Dimensions/Packaging: | DO-35 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Bulk |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
National Semiconductor | 功能相似 | DO-35 |
Leaded Silicon Diode Switching
|
||
1N3070
|
Fairchild | 功能相似 | DO-35 |
Leaded Silicon Diode Switching
|
||
1N3070
|
Central Semiconductor | 功能相似 |
Leaded Silicon Diode Switching
|
|||
1N3070
|
ON Semiconductor | 功能相似 | DO-204AH |
Leaded Silicon Diode Switching
|
||
1N3070
|
ETC1 | 功能相似 |
Leaded Silicon Diode Switching
|
|||
1N3070TR
|
Fairchild | 功能相似 | DO-35 |
ON Semiconductor 二极管 1N3070TR, Io=500mA, Vrev=200V, 50ns, 2引脚 DO-35封装
|
||
1N3070TR
|
ON Semiconductor | 功能相似 | DO-35 |
ON Semiconductor 二极管 1N3070TR, Io=500mA, Vrev=200V, 50ns, 2引脚 DO-35封装
|
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