Technical parameters/working voltage: 3.3 V
Technical parameters/breakdown voltage: 4 V
Technical parameters/dissipated power: 1000 mW
Technical parameters/clamp voltage: 10.9 V
Technical parameters/peak pulse power: 500 W
Technical parameters/minimum reverse breakdown voltage: 4 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Ethernet
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CDNBS08-SRDA3.3-4
|
Bourns J.W. Miller | 类似代替 | SOIC-8 |
ESD 保护器,Bourns Electronics ### 瞬态电压抑制器,Bourns Electronics
|
||
SRDA3.3-4.TBT
|
Semtech Corporation | 功能相似 | SOIC-8 |
SEMTECH SRDA3.3-4.TBT 二极管阵列, TVS, 500W, 3.3V, SOIC, 整卷
|
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