Technical parameters/output current: ≤3.00 A
Technical parameters/number of pins: 2
Technical parameters/forward voltage: 0.5 V
Technical parameters/polarity: Standard
Technical parameters/thermal resistance: 40℃/W (RθJA)
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 80 A
Technical parameters/forward voltage (Max): 500 mV
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/length: 9.5 mm
External dimensions/packaging: DO-201AD
Physical parameters/operating temperature: 65℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5821
|
Multicomp | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5821 肖特基整流器, 单, 30 V, 3 A, DO-201AD, 2 引脚, 500 mV
|
||
1N5821
|
ST Microelectronics | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5821 肖特基整流器, 单, 30 V, 3 A, DO-201AD, 2 引脚, 500 mV
|
||
1N5821
|
Taiwan Semiconductor | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5821 肖特基整流器, 单, 30 V, 3 A, DO-201AD, 2 引脚, 500 mV
|
||
|
|
Sensitron Semiconductor | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5821 肖特基整流器, 单, 30 V, 3 A, DO-201AD, 2 引脚, 500 mV
|
||
1N5821
|
HY Electronic | 类似代替 | 2 |
TAIWAN SEMICONDUCTOR 1N5821 肖特基整流器, 单, 30 V, 3 A, DO-201AD, 2 引脚, 500 mV
|
||
1N5821
|
Vishay Semiconductor | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5821 肖特基整流器, 单, 30 V, 3 A, DO-201AD, 2 引脚, 500 mV
|
||
1N5822RLG
|
ON Semiconductor | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5822RLG 肖特基整流二极管, 3A 40V DO-201AD
|
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