Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 3.00 A |
|
Technical parameters/output current: | ≤3.00 A |
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Technical parameters/forward voltage: | 500mV @3A |
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Technical parameters/polarity: | Standard |
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Technical parameters/forward current: | 3 A |
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Technical parameters/Maximum forward surge current (Ifsm): | 80 A |
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Technical parameters/forward current (Max): | 3 A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 65 ℃ |
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Technical parameters/operating temperature: | 150℃ (Max) |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-201AD |
|
Dimensions/Length: | 9.5 mm |
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Dimensions/Width: | 5.3 mm |
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Dimensions/Height: | 5.3 mm |
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Dimensions/Packaging: | DO-201AD |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Box (TB) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5821-E3/54
|
VISHAY | 类似代替 | DO-201AD |
VISHAY 1N5821-E3/54 肖特基整流二极管, 3A 30V DO-201AD
|
||
1N5821-E3/54
|
Vishay Semiconductor | 类似代替 | DO-201AD |
VISHAY 1N5821-E3/54 肖特基整流二极管, 3A 30V DO-201AD
|
||
1N5821-T
|
Micro Commercial Components | 功能相似 | DO-201AD |
1N5821 系列 30 V 3 A 通孔 肖特基 势垒 整流器 - DO-201AD
|
||
1N5821-T
|
Rectron Semiconductor | 功能相似 | DO-201AD |
1N5821 系列 30 V 3 A 通孔 肖特基 势垒 整流器 - DO-201AD
|
||
1N5821-TP
|
Micro Commercial Components | 功能相似 | DO-201AD |
Rectifier Diode, Schottky, 1 Phase, 1Element, 3A, 30V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
|
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