Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 60.0 A
Technical parameters/drain source resistance: 16.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±15.0 V
Technical parameters/Continuous drain current (Ids): 60.0 A
Technical parameters/rise time: 576 ns
Technical parameters/Input capacitance (Ciss): 3075pF @25V(Vds)
Technical parameters/descent time: 237 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.4 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.29 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTB60N06L
|
ON Semiconductor | 完全替代 | TO-263-3 |
功率MOSFET 60安培， 60伏特，逻辑电平N沟道TO- 220和D2PAK Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK
|
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