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Model NTB60N06L

Description Power MOSFET 60 amperes, 60 volts, logic level N-channel TO-220 and D2PAK Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK

Brand: ON Semiconductor

Packaging TO-263-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(5337) Minimum order quantity(1)

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Technical parameters/rated voltage (DC):	60.0 V
Technical parameters/rated current:	60.0 A
Technical parameters/drain source resistance:	16.0 mΩ
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	150 W
Technical parameters/Input capacitance:	3.22 nF
Technical parameters/gate charge:	81.0 nC
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Leakage source breakdown voltage:	60.0 V
Technical parameters/breakdown voltage of gate source:	±15.0 V
Technical parameters/Continuous drain current (Ids):	60.0 A
Technical parameters/rise time:	576 ns
Technical parameters/Input capacitance (Ciss):	3075pF @25V(Vds)
Technical parameters/descent time:	237 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2.4 W
Encapsulation parameters/installation method:	Surface Mount
Encapsulation parameters/Encapsulation:	TO-263-3
Dimensions/Length:	10.29 mm
Dimensions/Width:	9.65 mm
Dimensions/Height:	4.83 mm
Dimensions/Packaging:	TO-263-3
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead

Alternative material

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	NTB60N06LT4	ON Semiconductor	完全替代	TO-263-3	功率MOSFET 60安培， 60伏特，逻辑电平N沟道TO- 220和D2PAK Power MOSFET 60 Amps, 60 Volts, Logic Level N−Channel TO−220 and D2PAK	PDF