Technical parameters/number of channels: 2
Technical parameters/drain source resistance: 8 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 630 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 150 mA
Technical parameters/rise time: 13 ns
Technical parameters/Input capacitance (Ciss): 100pF @10V(Vds)
Technical parameters/rated power (Max): 446 mW
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-89-6
External dimensions/length: 1.6 mm
External dimensions/width: 1.2 mm
External dimensions/height: 0.6 mm
External dimensions/packaging: SC-89-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDY2000PZ
|
Fairchild | 类似代替 | SC-89-6 |
FAIRCHILD SEMICONDUCTOR FDY2000PZ 双路场效应管, MOSFET, 双P沟道, 350 mA, -20 V, 1.2 ohm, -4.5 V, -1.03 V
|
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