Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): 350 mA
Technical parameters/rise time: 13 ns
Technical parameters/Input capacitance (Ciss): 100pF @10V(Vds)
Technical parameters/rated power (Max): 446 mW
Technical parameters/descent time: 13 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 0.625 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-89-6
External dimensions/length: 1.7 mm
External dimensions/width: 1.2 mm
External dimensions/height: 0.6 mm
External dimensions/packaging: SC-89-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDY2001PZ
|
Fairchild | 类似代替 | SC-89-6 |
指定的双P沟道（ -2.5V ）的PowerTrench MOSFET Dual P-Channel (-2.5V) Specified PowerTrench MOSFET
|
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