Technical parameters/drain source resistance: 1.20 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage of gate source: ±6.00 V
Encapsulation parameters/Encapsulation: SC-75
External dimensions/packaging: SC-75
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1013R-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-75-3 |
MOSFET; Power; P-Ch; VDSS -20V; RDS(ON) 0.8Ω; ID -350mA; SC-75A (SOT-416); PD 150mW
|
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